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Silicon photodiode TO-46 spectral response between 330 and 720nm
Luna Optoelectronics
Photodiode; 400 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 180 pF (Typ.); -20 deg
Photoconductive Cell, Hermetically Sealed, TO-8
Optek / TT Electronics
Sensor, Opto Switch Assembly, Transmissive, Single Channel, 5.1mm, 30V, 50mA
HONEYWELL
Diode, Infrared Emitter; Side Looking; 880 nm; 1.7 V; 20 mA; -40 degC; 85 degC
Detector; NDIR Gas Sensing; Dual AnalogOutput; TO-5; HC; Leads
Detector, Phototransistor; T-1; NPN; 20deg; 30 V; 0.4 V; 12 mA (Min.); 100 nA
PhotoDiode; Pill Style Metal Can; PN; 48 deg; 7 uA (Min.); 20 nA; 125 mW; -55
Detector, Phototransistor; TO-46; NPN; 90/18 deg; 30 V (Min.); 0.4 V (Max.)
Phototransistor; TO-46; NPN; 30 V; 0.4 V; 16 mA (Min.); 100 nA; 150 mW; -55 deg
Diode, Infrared Emitter; TO-46 Metal Can; 880 nm; 1.9 V; 100 mA; -55 degC; 125
Omron Automation
Sensor, Slot Dark-On, T-Shape, Through Beam, NPN, 5 to 24VDC, 5mm, 35 mA
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
TC SLOT PMS PNP D-ON L SHAPE
PHOTO TRANSISTOR PLASTIC T-1
Photocell; 600 Kilohms (Min.); 550 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO-
SENS OPTO SLOT 3.18MM TRANS C-MT
PHOTOTRANS. W/BASE-EMITTER RES.
Detector, Thermopile TO-5 0.7 mm x 0.7 mm 35 V/W 2.5 mm
Photo Diode; Peak Reflow Compatible (260 C)
Photoconductive Cell, CDS
PHOTOCELL
Photodiode; 0.16 mA (Typ.); 0.45 V (Typ.); 0.02 uA (Typ.); 0.5 nF (Typ.); 0.2
Silicon photodiode; 6mm ceramic; IR blocking; blue enhanced; wide field of view
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Silicon photodiode; ceramic; plastic molded lens; fast response; low dark current
Silicon photodiode; three lead TO-8 hermetic; flat window; UV enhanced; wide FOV
Silicon photodiode; long T1 package; fastresponse; dark current; intermediate FOV
OSRAM Opto
Opto SFH 203 P IR + Visible Light Si Photodiode, 75 deg, Thru Hole 5mm package
Opto SFH 229 Full Spectrum Si Photodiode, 17 deg, Through Hole 3mm package
NTE ELECTRONICS
NTE Electronics, Inc.
Photoconductive Cell, Hermetically Sealed, TO-18
Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-5
CDS/CDSE PHOTOCONDUCTIVE CELLS, HERMETICALLY SEALED PKG, TO-5
Photocell; 100 Kilohms (Min.); 550 nm; 170 Vpeak (Max.); 500 mW @ 25 degC; TO-
Photodiode, Planar; Clear Epoxy Dome Package; 180 muA (Typ.); 0.40 V (Typ.); 2.0
Photocell, Hermetically Packaged
Photoconductive Cell; 34 Kilohms (Typ.); 500 Kilohms (Min.); 0.80 (Typ.)
HI POWER OUTMED SPEEDTO-46 FLAT LENS
Thermopile Detector; 75 Kilohms (Typ.); TPS 333 Series
Optoelectronics, Detector; Pyroelectric Dual Element for Intrusion Alarm; TO-5
Siliconix / Vishay
TSFF5210 IR LED, 870nm, T-1 3/4 (5mm) Through Hole package
Detector, Phototransistor; Side-LookingPlastic; NPN; 50 deg; 30 V; 0.4 V; 100
Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); 40 V
Detector, PhotoDarlington; Compact Metal Can Coaxial; NPN; 24 deg; 15 V; 1.1 V
Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); -40 degC
Detector, PhotoDarlington; Side-LookingPlastic; 50 deg; 15 V; 1.1 V; 1 mA (Min
Pyroelectric Infrared Detectors - Single and Dual Channel Detectors